The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Aug. 15, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Shirou Ozaki, Yamato, JP;
Naoya Okamoto, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H02M 3/335 (2006.01); H03F 3/19 (2006.01); H03F 1/32 (2006.01); H02M 3/337 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H02M 3/33507 (2013.01); H03F 1/3247 (2013.01); H03F 3/19 (2013.01); H02M 3/337 (2013.01); H02M 3/33592 (2013.01); H02M 2001/007 (2013.01); Y02B 70/1475 (2013.01);
Abstract
A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which is formed on a surface of the first insulating film and contains a carbonyl group; and a second insulating film which covers a surface of the first adhering film and has a lower dielectric constant than the first insulating film.