The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Apr. 25, 2022
Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventors:
Shirou Ozaki, Yamato, JP;
Junji Kotani, Atsugi, JP;
Toshihiro Ohki, Hadano, JP;
Naoya Okamoto, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H01L 21/02 (2006.01); H03F 1/32 (2006.01); H03F 3/213 (2006.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H01L 21/02241 (2013.01); H03F 1/3241 (2013.01); H03F 3/213 (2013.01); H10D 30/015 (2025.01); H10D 30/472 (2025.01); H10D 62/824 (2025.01);
Abstract
A compound semiconductor device includes a carrier supply layer, a channel layer disposed over the carrier supply layer and configured to include InGaAs, and an etching stopper layer disposed over the channel layer, and configured to include a first layer disposed over the channel layer and configured to include InGaP, and a second layer disposed over the first layer and configured to include InGaP, wherein x1 is greater than 0 and less than or equal to 1, x2 is greater than or equal to 0 and less than 1, and x1 is greater than x2.