The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Jul. 31, 2020
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventors:
Kenichi Kawaguchi, Ebina, JP;
Naoya Okamoto, Isehara, JP;
Yusuke Kumazaki, Atsugi, JP;
Tsuyoshi Takahashi, Ebina, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 21/0262 (2013.01); H01L 21/02546 (2013.01); H01L 21/02603 (2013.01); H01L 21/28264 (2013.01); H01L 21/28575 (2013.01); H01L 29/0676 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66522 (2013.01); H01L 29/66742 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.