The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Aug. 06, 2021
Fujitsu Limited, Kawasaki, JP;
Naoya Okamoto, Isehara, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes a first layer that contains gold (Au) and is formed on one surface of a semiconductor substrate and a second layer that contains nickel (Ni) and is formed on the first layer. The semiconductor device is provided with a via hole that passes through the second layer, the first layer, and the semiconductor substrate from one surface to another surface opposite thereto, and a via wiring is formed on the inner surface of the via hole. The second layer is a mask used when the semiconductor substrate is etched to form the via hole, and the first layer is a base layer for forming the second layer on the semiconductor substrate. By using an Au-containing layer as the first layer, side etching on the first layer is prevented when the semiconductor substrate is etched, and disconnection of the via wiring is prevented.