The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Jul. 31, 2017
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Shirou Ozaki, Yamato, JP;
Naoya Okamoto, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H02M 3/335 (2006.01); H03F 3/16 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H03F 1/32 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/28264 (2013.01); H01L 29/513 (2013.01); H02M 3/33569 (2013.01); H03F 1/3247 (2013.01); H03F 3/16 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.