The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Aug. 18, 2022
1finity Inc., Kawasaki, JP;
Yusuke Kumazaki, Atsugi, JP;
Naoki Hara, Sagamihara, JP;
Naoya Okamoto, Isehara, JP;
Shirou Ozaki, Yamato, JP;
Toshihiro Ohki, Hadano, JP;
1FINITY Inc., Kawasaki, JP;
Abstract
A semiconductor device includes: a substrate; an electron traveling layer provided above the substrate; an electron supply layer provided above the electron traveling layer; gate, source and drain electrodes provided above the electron supply layer; first protrusions that extend from a lower end of the source electrode through an inside of the electron supply layer to below an upper surface of the electron traveling layer; and second protrusions that extend from a lower end of the drain electrode through the inside of the electron supply layer to below the upper surface of the electron traveling layer, wherein a first volume ratio of the first protrusions in a first area where the first protrusions is provided is 60% or less, and a second volume ratio of the second protrusions in a second area where the second protrusions is provided is 60% or less.