Fujitsu Corporation

Naoya Okamoto

Shirou Ozaki

Kozo Makiyama

Toshihiro Ohki

Yuichi Minoura

Toyoo Miyajima

Naoki Hara

Yusuke Kumazaki

Hitoshi Tanaka

Toshihide Kikkawa

Tsuyoshi Takahashi

Hideyasu Ando

Shinji Yamaura

Takeshi Tomioka

Lei Zhu

Atsushi Yamada

Yoshihiro Nakata

Junji Kotani

Kenichi Kawaguchi

Yoichi Kamada

A compound semiconductor device includes a carrier supply layer, a channel layer disposed over the carrier supply layer and configured to include InGaAs, and an etching stopper layer disposed over the channel layer, and configured to include a first layer disposed over the channel layer and configured to include InGaP, and a second layer disposed over the first layer and configured to include InGaP, wherein x1 is greater than 0 and less than or equal to 1, x2 is greater than or equal to 0 and less than 1, and x1 is greater than x2.

Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device

A high-frequency circuit board includes: a first insulating layer having a first dielectric constant; a first metal layer provided to stack over the first insulating layer; a second insulating layer provided to stack over the first metal layer, and having a second dielectric constant lower than the first dielectric constant; a second metal layer provided to stack over the second insulating layer, on which a compound semiconductor device is mounted; and first vias penetrating the second insulating layer and connecting the first metal layer with the second metal layer.

High-frequency circuit board and antenna module

A semiconductor device includes a first layer that contains gold (Au) and is formed on one surface of a semiconductor substrate and a second layer that contains nickel (Ni) and is formed on the first layer. The semiconductor device is provided with a via hole that passes through the second layer, the first layer, and the semiconductor substrate from one surface to another surface opposite thereto, and a via wiring is formed on the inner surface of the via hole. The second layer is a mask used when the semiconductor substrate is etched to form the via hole, and the first layer is a base layer for forming the second layer on the semiconductor substrate. By using an Au-containing layer as the first layer, side etching on the first layer is prevented when the semiconductor substrate is etched, and disconnection of the via wiring is prevented.

Semiconductor device, having via wiring, method of manufacturing semiconductor device having via wiring, and electronic apparatus with semiconductor device having via wiring

A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

Semiconductor device and method for manufacturing semiconductor device

A compound semiconductor device includes a compound semiconductor laminate structure including an electron transit layer and an electron supply layer, a gate electrode, a source electrode, and a drain electrode that are formed over the electron supply layer, a first insulating layer of diamond formed between the gate electrode and the drain electrode over the compound semiconductor laminate structure, and a second insulating layer formed between the gate electrode and the source electrode over the compound semiconductor laminate structure, wherein a positive compressive stress is applied from the first insulating layer to the electron supply layer, and a compressive stress from the second insulating layer to the electron supply layer is smaller than the compressive stress from the first insulating layer to the electron supply layer.

Compound semiconductor device

A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOand InO. AlO/InOin the metal oxide film is greater than or equal to 3.

Method for manufacturing gate insulator for HEMT

A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which is formed on a surface of the first insulating film and contains a carbonyl group; and a second insulating film which covers a surface of the first adhering film and has a lower dielectric constant than the first insulating film.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a semiconductor chip including a substrate and an element region on the substrate, a heat transfer body made of diamond, and a metal layer between the semiconductor chip and the heat transfer body, wherein the substrate includes an amorphous region on a back surface thereof, the amorphous region and the metal layer are bonded to each other, and the metal layer and the heat transfer body are bonded to each other.

Semiconductor device and method for manufacturing same

A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.

Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier

A photosynthesis apparatus includes a groove part formed in a semiconductor substrate; a first conductive type area formed on one side surface of the groove part; a second conductive type area formed on another side surface of the groove part; an oxidation electrode formed in contact with the first conductive type area on the one side surface; a reduction electrode formed in contact with the second conductive type area on the other side surface; and a proton diaphragm formed at a center part of the groove part. Water including carbon dioxide is supplied to the groove part, and light is radiated to the oxidation electrode or the reduction electrode to generate oxygen and a hydrogen ion from the water at the oxidation electrode, and the generated hydrogen ion penetrates the proton diaphragm and reacts with the carbon dioxide to generate formic acid at the reduction electrode.

Photosynthesis apparatus

[object Object]

A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor, on a substrate; a second semiconductor layer formed of a nitride semiconductor, on the first semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; a first insulating film formed on the second semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode formed on the second insulating film. The first insulating film includes a nitride film formed on a side of the second semiconductor layer, and an oxynitride film formed on the nitride film, and the second insulating film is formed of an oxide.

Semiconductor device and manufacturing method of semiconductor device

A compound semiconductor device includes a first protection film which covers a surface of a compound semiconductor layer, where the first protection film is an insulating film whose major constituent is Si and at least one element between N and O, and a hydrophobic layer containing Si&#x2014;CHis formed at a surface thereof.

Compound semiconductor device and method of manufacturing the same

A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200&#xb0; C. and less than or equal to 600&#xb0; C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface of the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.

Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole

Growing community of inventors

Isehara, Japan

Naoya Okamoto