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For the Inventor, By the Inventor

Yamanashi, Japan

Eudyna Devices Inc.


USPTO Granted Patents = 86

% Expired Patents = 31.4


Forward Citations = 384

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80 inventors (with patents filed for the assignee):

goldMedal Tsutomu Ishikawa (11 out of 15 patents)

silverMedal Takuya Fujii (8 out of 26 patents)

bronzeMedal Haruyoshi Ono (7 out of 10 patents)

4.  Ken Nakata (6 out of 6 patents)

5.  Hirokazu Tanaka (6 out of 11 patents)

6.  Ryuji Yamabi (5 out of 5 patents)

7.  Takeshi Kawasaki (5 out of 5 patents)

8.  Yoshihiro Yoneda (4 out of 48 patents)

9.  Hajime Matsuda (4 out of 11 patents)

10.  Seiji Yaegashi (4 out of 4 patents)

11.  Hiroshi Yano (4 out of 4 patents)

12.  Masahiro Nishi (3 out of 20 patents)

13.  Norikazu Iwagami (3 out of 4 patents)

14.  Toyotoshi Machida (3 out of 3 patents)

15.  Sosaku Sawada (3 out of 3 patents)


Core Competencies:
Laser Module
Semiconductor Laser
Optical Device
Tunable Laser
Field Effect Transistor
Photodetector
Electronic Circuit
Manufacturing Method
GaN-based Semiconductor
Avalanche Multiplication
Testing System
Wavelength Tuning

86 patents:

1. 8588266 - Wavelength tunable semiconductor laser having two difractive grating areas (2013-11-19),
2. 8563991 - Optical semiconductor device, laser chip and laser module (2013-10-22),
3. 8304267 - Laser device, laser module, semiconductor laser and fabrication method of semiconductor laser (2012-11-06),
4. 8259766 - Laser diode drive circuit, electronic circuit, method for controlling laser diode drive circuit, and method for controlling duty (2012-09-04),
5. 8232557 - Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same (2012-07-31),
6. 8222736 - Semiconductor device with Al pad (2012-07-17),
7. 8216950 - Capacitive element fabrication method (2012-07-10),
8. 8194710 - Semiconductor laser with heater (2012-06-05),
9. 8188520 - Field effect transistor and method for fabricating the same (2012-05-29),
10. 8178900 - Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film (2012-05-15),
11. 8105866 - Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer (2012-01-31),
12. 8101957 - Optical semiconductor device, laser chip and laser module (2012-01-24),
13. 8044433 - GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage (2011-10-25),
14. 8009947 - Optical semiconductor device and method of controlling the same (2011-08-30),
15. 7978737 - Laser device, control device of laser device, method of controlling laser device, method of tuning wavelength of laser device and control data of laser device (2011-07-12),
Eudyna Devices Inc. is a leading developer and manufacturer of optical semiconductor devices, specializing in advanced technologies such as laser modules and semiconductor lasers. The company focuses on creating high-performance optical devices, including tunable lasers and photodetectors, which are integral to various applications in telecommunications and data communication. Based in Yamanashi, Japan, Eudyna is committed to innovation in electronic circuits and manufacturing methods, positioning itself at the forefront of the optical technology sector.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

86 Patents

#6 in Yamanashi 400-0862

#1,240 in Japan

#8,853 in the World

Yamanashi, JP
Yamanashi, Japan

Eudyna Devices Inc.

Forward Citations = 384

80 inventors:

goldMedal Tsutomu Ishikawa (11 out of 15 patents)

silverMedal Takuya Fujii (8 out of 26 patents)

bronzeMedal Haruyoshi Ono (7 out of 10 patents)

4.  Ken Nakata (6 out of 6 patents)

5.  Hirokazu Tanaka (6 out of 11 patents)

Please report any incorrect information to [email protected]
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