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Yamanashi, Japan

Eudyna Devices Inc.

USPTO Granted Patents = 86

EPO Patents = 7

Forward Citations = 360

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83 inventors (with patents filed for the assignee):

Tsutomu Ishikawa (11 out of 15 patents)

Takuya Fujii (8 out of 26 patents)

Haruyoshi Ono (7 out of 10 patents)

4. Ken Nakata (6 out of 6 patents)

5. Hirokazu Tanaka (6 out of 11 patents)

6. Ryuji Yamabi (5 out of 5 patents)

7. Takeshi Kawasaki (5 out of 5 patents)

8. Yoshihiro Yoneda (4 out of 48 patents)

9. Hajime Matsuda (4 out of 11 patents)

10. Seiji Yaegashi (4 out of 4 patents)

11. Hiroshi Yano (4 out of 4 patents)

12. Masahiro Nishi (3 out of 20 patents)

13. Norikazu Iwagami (3 out of 4 patents)

14. Toyotoshi Machida (3 out of 3 patents)

15. Sosaku Sawada (3 out of 3 patents)

Core Competencies:

Wavelength Tunable Laser

Optical Semiconductor Device

Semiconductor Laser

High Electron Mobility Transistor

Photo Detecting Element

Laser Diode Drive Circuit

GaN-based Semiconductor Layer

Semiconductor Fabrication Method

Avalanche Photodetector

Electronic Circuit Module

Tunable Laser Module

Fluoroalcohol Preparation

86 patents: Sort by Forward Citations

1. 8588266 - Wavelength tunable semiconductor laser having two difractive grating areas (2013-11-19),

2. 8563991 - Optical semiconductor device, laser chip and laser module (2013-10-22),

3. 8304267 - Laser device, laser module, semiconductor laser and fabrication method of semiconductor laser (2012-11-06),

4. 8259766 - Laser diode drive circuit, electronic circuit, method for controlling laser diode drive circuit, and method for controlling duty (2012-09-04),

5. 8232557 - Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same (2012-07-31),

6. 8222736 - Semiconductor device with Al pad (2012-07-17),

7. 8216950 - Capacitive element fabrication method (2012-07-10),

8. 8194710 - Semiconductor laser with heater (2012-06-05),

9. 8188520 - Field effect transistor and method for fabricating the same (2012-05-29),

10. 8178900 - Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film (2012-05-15),

11. 8105866 - Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer (2012-01-31),

12. 8101957 - Optical semiconductor device, laser chip and laser module (2012-01-24),

13. 8044433 - GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage (2011-10-25),

14. 8009947 - Optical semiconductor device and method of controlling the same (2011-08-30),

15. 7978737 - Laser device, control device of laser device, method of controlling laser device, method of tuning wavelength of laser device and control data of laser device (2011-07-12),

Eudyna Devices Inc. is a leading global provider of innovative semiconductor solutions for wireless communications, fiber-optic networks, and microwave applications. With a strong emphasis on research and development, Eudyna consistently delivers high-quality products tailored to meet the evolving needs of the telecommunications industry. Their comprehensive portfolio includes power amplifiers, transistors, lasers, and other advanced components that enable reliable and efficient communication networks. Eudyna's commitment to excellence makes them a trusted partner for telecom companies worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

86 Patents

#4 in Yamanashi 400-0862

#1,208 in Japan

#8,577 in the World

Yamanashi, Japan

Eudyna Devices Inc.

Forward Citations = 360

83 inventors:

Tsutomu Ishikawa (11 out of 15 patents)

Takuya Fujii (8 out of 26 patents)

Haruyoshi Ono (7 out of 10 patents)

4. Ken Nakata (6 out of 6 patents)

5. Hirokazu Tanaka (6 out of 11 patents)

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