The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Jun. 05, 2018
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Kozo Makiyama, Kawasaki, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes a buffer layer, a channel layer, and a carrier supply layer; first and second recesses formed in the channel layer and the carrier supply layer, to reach the buffer layer; first and second nitride semiconductor layers in the first and second recess, respectively; a source electrode over the first nitride semiconductor layer; a drain electrode over the second nitride semiconductor layer; and a gate electrode over the carrier supply layer between the first and second recesses. Each of the first and second nitride semiconductor layers includes first and second regions containing donors. An interface between the first and second regions is positioned deeper than two-dimensional electron gas on a surface side of the channel layer, and energy at a bottom of a conduction band of the second region is higher than energy at a bottom of a conduction band of the first region.