The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Aug. 27, 2014
Applicant:
Transphorm Japan, Inc., Kohoku-ku, Yokohama, Kanagawa, JP;
Inventors:
Youichi Kamada, Yamato, JP;
Kenji Kiuchi, Aizuwakamatsu, JP;
Assignee:
Transphorm Japan, Inc., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/43 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 29/41725 (2013.01); H01L 29/43 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 21/02107 (2013.01); H01L 21/283 (2013.01); H02M 3/33507 (2013.01);
Abstract
An AlGaN/GaN HEMT includes: a compound semiconductor layer; a source electrode and a drain electrode formed on an upper side of the compound semiconductor layer; and an Al—Si—N layer being a high-resistance layer disposed in a lower portion of at least one of the source electrode and the drain electrode and higher in an electric resistance value than the source electrode and the drain electrode.