The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Mar. 11, 2015
Applicant:
Transphorm Japan, Inc., Yokohama, Kanagawa, JP;
Inventor:
Atsushi Yamada, Hiratsuka, JP;
Assignee:
Transphorm Japan, Inc., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/56 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/42364 (2013.01); H01L 29/778 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.