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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9099351 B1

PDFFull Text
Date of Patent:
Aug. 04, 2015

Filed:

Jul. 16, 2013

Compound semiconductor device and method of manufacturing the same

Applicant:

Transphorm Japan, Inc., Yokohama, Kanagawa, JP;

Inventors:

Masato Nishimori, Atsugi, JP;

Tadahiro Imada, Kawasaki, JP;

Toshihiro Ohki, Hadano, JP;

Assignee:

Transphorm Japan, Inc., Yokohama, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/12 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/12 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02521 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract

A compound semiconductor device includes as compound semiconductor layers: a first layer; a second layer larger in band gap than the first layer, formed above the first layer; a third layer having a p-type conductivity type, formed above the second layer; a gate electrode formed above the second layer via the third layer; a fourth layer larger in band gap than the second layer, formed to be in contact with the third layer above the second layer; and a fifth layer smaller in band gap than the fourth layer, formed to be in contact with the third layer above the fourth layer.

Find Patent Forward Citations

Nishimori, Masato. (2015). Compound semiconductor device and method of manufacturing the same (U.S. Patent No. 9099351). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9099351

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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