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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9685338 B1

PDFFull Text
Date of Patent:
Jun. 20, 2017

Filed:

Aug. 19, 2016

Compound semiconductor device and method of manufacturing the same

Applicant:

Transphorm Japan, Inc., Goleta, CA (US);

Inventors:

Yuichi Minoura, Zama, JP;

Yoshitaka Watanabe, Aidumisato, JP;

Assignee:

Transphorm Japan, Inc., Yokohama, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

A Sefer

Assistant Examiner:

Vincent Wall

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/40 (2006.01); H02M 3/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/29 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 23/31 (2006.01); H02M 3/335 (2006.01); H02M 7/04 (2006.01); H02M 1/00 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/66462 (2013.01); H01L 29/66522 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01); H02M 3/28 (2013.01); H01L 29/42376 (2013.01); H01L 29/517 (2013.01); H01L 2924/0002 (2013.01); H02M 3/33576 (2013.01); H02M 7/04 (2013.01); H02M 2001/007 (2013.01);
Abstract

A compound semiconductor device includes: a compound semiconductor layered structure; a gate electrode formed above the compound semiconductor layered structure; a first protective insulating film that covers a surface of the compound semiconductor layered structure and is made of silicon nitride as a material; a second protective insulating film that covers the gate electrode on the first protective insulating film and is made of silicon oxide as a material; and a third protective insulating film that contains silicon oxynitride and is formed between the first protective insulating film and the second protective insulating film.

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