The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Dec. 05, 2014
Applicant:
Transphorm Japan, Inc., Yokohama, Kanagawa, JP;
Inventor:
Toshihide Kikkawa, Machida, JP;
Assignee:
Transphorm Japan, Inc., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H02M 3/335 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/201 (2006.01); H02M 1/088 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02518 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H02M 1/088 (2013.01); H02M 3/33507 (2013.01); H02M 3/33569 (2013.01); H01L 21/0262 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 29/1066 (2013.01);
Abstract
An AlGaN/GaN.HEMT includes, a compound semiconductor lamination structure; a p-type semiconductor layer formed on the compound semiconductor lamination structure; and a gate electrode formed on the p-type semiconductor layer, in which Mg being an inert element of p-GaN is introduced into both sides of the gate electrode at the p-type semiconductor layer, and introduced portions of Mg are inactivated.