Toshihide Kikkawa

This inventor holds 87 USPTO granted patents and 11 published patent applications and 10 EPO patents, primarily in Compound Semiconductor Devices (CPC class H01L29-66462). Top assignees: Fujitsu Corporation, Transphorm Japan, Inc., Hitachi Cable Co., Ltd.. Active years: 1992-2022.

USPTO Granted Patents = 87 (Patent Applications = 11)

% Patents Active = 83.9

EPO Patents = 10 (Patent Applications = 10)

Average Co-Inventor Count = 1.6

ph-index = 12

Forward Citations = 606(Granted Patents)

Forward Citations (Not Self Cited) = 574(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Sagamihara, JP (1992)
Akiruno, JP (2015)
Machida, JP (2013 - 2016)
Aizu-Wakamatsu, JP (2016)
Kawasaki, JP (1995 - 2017)
Goleta, CA (US) (2017 - 2022)

Company Filing History:

Transphorm Japan, Inc.

patents

3 out of 4

Hitachi Cable Co., Ltd.

Transphorm Technology, Inc.

patents

where one patent can have more than one assignee

Years Active: 1992-2022

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Areas of Expertise:

III-Nitride Devices

Al-SiO Gate Insulator

Recessed Ohmic Contacts

Buffer Layer

Gate Recess Structure

Indium Integration

Overhang-Shaped Gate

Fabrication Method

Manufacturing Techniques

Compound Semiconductor Layer

Thermal Management

Device Architecture

87 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11322599 - Enhancement mode III-nitride devices having an Al-SiO gate insulator (2022-05-03),

2. 9818840 - Semiconductor device and manufacturing method of semiconductor device (2017-11-14),

3. 9640648 - Semiconductor device and manufacturing method of semiconductor device (2017-05-02),

4. 9608083 - Semiconductor device (2017-03-28),

5. 9536967 - Recessed ohmic contacts in a III-N device (2017-01-03),

6. 9496380 - Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the same (2016-11-15),

7. 9478539 - Compound semiconductor device and method of manufacturing the same (2016-10-25),

8. 9437723 - Manufacturing method of semiconductor device including indium (2016-09-06),

9. 9412812 - Compound semiconductor device and method of manufacturing the same (2016-08-09),

10. 9368359 - Method of manufacturing compound semiconductor device (2016-06-14),

11. 9331190 - Compound semiconductor device and method of manufacturing the same (2016-05-03),

12. 9299822 - Semiconductor device and manufacturing method of semiconductor device (2016-03-29),

13. 9276100 - Semiconductor device having a gate recess structure (2016-03-01),

14. 9276072 - Semiconductor device and method for manufacturing semiconductor device (2016-03-01),

15. 9224848 - Compound semiconductor device and manufacturing method of the same (2015-12-29),

Title: Toshihide Kikkawa: Pioneering Inventor from Kawasaki

Introduction: Toshihide Kikkawa is a renowned inventor hailing from Kawasaki, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kikkawa's latest patents focus on advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to pushing the boundaries of technological development.

Career Highlights: With a career spanning over two decades, Kikkawa has worked with leading tech companies and research institutions, consistently delivering cutting-edge inventions that have revolutionized various industries.

Collaborations: Throughout his career, Kikkawa has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and creativity that has led to numerous successful projects and patents.

Conclusion: Toshihide Kikkawa's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology and inspiring the next generation of inventors.