The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Oct. 20, 2014
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Masato Nishimori, Atsugi, JP;
Toshihide Kikkawa, Aizu-Wakamatsu, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 21/28264 (2013.01); H01L 29/1029 (2013.01); H01L 29/41725 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract
A semiconductor device includes: a first nitride semiconductor layer formed over a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer; element isolation regions formed in a part of the second nitride semiconductor layer and the first nitride semiconductor layer; a gate electrode, source electrodes, and a drain electrode formed over the second semiconductor layer and the element isolation regions; and a drain field plate formed in such a manner as to project from upper portions of side surfaces of the drain electrode.