For the Inventor, By the Inventor

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Goleta, CA, United States of America

Transphorm Technology, Inc.

USPTO Granted Patents = 15

Forward Citations = 21

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18 inventors (with patents filed for the assignee):

David Michael Rhodes (8 out of 10 patents)

Carl Joseph Neufeld (7 out of 13 patents)

Rakesh K Lal (7 out of 27 patents)

4. Yifeng Wu (7 out of 120 patents)

5. Umesh Kumar Mishra (7 out of 160 patents)

6. Geetak Gupta (6 out of 7 patents)

7. Davide Bisi (4 out of 4 patents)

8. John Kirk Gritters (3 out of 3 patents)

9. Jason Cuadra (3 out of 14 patents)

10. Zhan Wang (3 out of 9 patents)

11. Brian L Swenson (2 out of 7 patents)

12. Sung Hae Yea (2 out of 6 patents)

13. Primit A Parikh (2 out of 72 patents)

14. Mo Wu (1 out of 3 patents)

15. Xiang Liu (1 out of 2 patents)

15 patents: Sort by Forward Citations

1. 12550702 - III-nitride devices with through-via structures (2026-02-10),

2. 12451468 - III-N devices with improved reliability (2025-10-21),

3. 12324180 - Integrated design for III-Nitride devices (2025-06-03),

4. 12266725 - Lateral III-nitride devices including a vertical gate module (2025-04-01),

5. 12074150 - Module configurations for integrated III-nitride devices (2024-08-27),

6. 11973138 - N-polar devices including a depleting layer with improved conductivity (2024-04-30),

7. 11810971 - Integrated design for III-Nitride devices (2023-11-07),

8. 11749656 - Module configurations for integrated III-Nitride devices (2023-09-05),

9. 11322599 - Enhancement mode III-nitride devices having an Al-SiO gate insulator (2022-05-03),

10. 11309884 - Switching circuits having drain connected ferrite beads (2022-04-19),

11. 11121216 - III-nitride devices including a graded depleting layer (2021-09-14),

12. 10897249 - Switching circuits having drain connected ferrite beads (2021-01-19),

13. 10756207 - Lateral III-nitride devices including a vertical gate module (2020-08-25),

14. 10630285 - Switching circuits having drain connected ferrite beads (2020-04-21),

15. 10629681 - III-nitride devices including a graded depleting layer (2020-04-21),

Transphorm Technology, Inc. is a global leader in the design and manufacturing of gallium nitride (GaN) power products. The company's high-performance GaN technology delivers increased efficiency and reliability for a wide range of power conversion applications, including electric vehicles, renewable energy systems, and data centers.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

15 Patents

#31 in Goleta, CA

#5,018 in California

#21,011 in US

#39,801 in the World

Goleta, CA, United States of America

Transphorm Technology, Inc.

Forward Citations = 21

18 inventors:

David Michael Rhodes (8 out of 10 patents)

Carl Joseph Neufeld (7 out of 13 patents)

Rakesh K Lal (7 out of 27 patents)

4. Yifeng Wu (7 out of 120 patents)

5. Umesh Kumar Mishra (7 out of 160 patents)

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