For the Inventor, By the Inventor

Enter assignee name

Goleta, CA, United States of America

Transphorm Technology, Inc.

Calculating rank

USPTO Granted Patents = 15

Forward Citations = 21

Loading Chart...

Loading Chart...

18 inventors (with patents filed for the assignee):

David Michael Rhodes (8 out of 10 patents)

Carl Joseph Neufeld (7 out of 13 patents)

Rakesh K Lal (7 out of 27 patents)

4. Yifeng Wu (7 out of 120 patents)

5. Umesh Kumar Mishra (7 out of 160 patents)

6. Geetak Gupta (6 out of 7 patents)

7. Davide Bisi (4 out of 4 patents)

8. John Kirk Gritters (3 out of 3 patents)

9. Jason Cuadra (3 out of 14 patents)

10. Zhan Wang (3 out of 9 patents)

11. Brian L Swenson (2 out of 7 patents)

12. Sung Hae Yea (2 out of 6 patents)

13. Primit A Parikh (2 out of 72 patents)

14. Mo Wu (1 out of 3 patents)

15. Xiang Liu (1 out of 2 patents)

15 patents: Sort by Forward Citations

1. 12550702 - III-nitride devices with through-via structures (2026-02-10),

2. 12451468 - III-N devices with improved reliability (2025-10-21),

3. 12324180 - Integrated design for III-Nitride devices (2025-06-03),

4. 12266725 - Lateral III-nitride devices including a vertical gate module (2025-04-01),

5. 12074150 - Module configurations for integrated III-nitride devices (2024-08-27),

6. 11973138 - N-polar devices including a depleting layer with improved conductivity (2024-04-30),

7. 11810971 - Integrated design for III-Nitride devices (2023-11-07),

8. 11749656 - Module configurations for integrated III-Nitride devices (2023-09-05),

9. 11322599 - Enhancement mode III-nitride devices having an Al-SiO gate insulator (2022-05-03),

10. 11309884 - Switching circuits having drain connected ferrite beads (2022-04-19),

11. 11121216 - III-nitride devices including a graded depleting layer (2021-09-14),

12. 10897249 - Switching circuits having drain connected ferrite beads (2021-01-19),

13. 10756207 - Lateral III-nitride devices including a vertical gate module (2020-08-25),

14. 10630285 - Switching circuits having drain connected ferrite beads (2020-04-21),

15. 10629681 - III-nitride devices including a graded depleting layer (2020-04-21),

Company Overview

Transphorm Technology, Inc. is a leading innovator in the field of power conversion technology, specializing in the development and manufacturing of high-performance gallium nitride (GaN) solutions. The company focuses on enhancing energy efficiency and reducing the size of power systems across various applications, including consumer electronics, industrial equipment, and electric vehicles. Headquartered in Goleta, California, Transphorm is committed to advancing the capabilities of power electronics through cutting-edge research and development.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

15 Patents

#31 in Goleta, CA

#5,031 in California

#21,068 in US

#39,959 in the World

Goleta, CA, United States of America

Transphorm Technology, Inc.

Forward Citations = 21

18 inventors:

David Michael Rhodes (8 out of 10 patents)

Carl Joseph Neufeld (7 out of 13 patents)

Rakesh K Lal (7 out of 27 patents)

4. Yifeng Wu (7 out of 120 patents)

5. Umesh Kumar Mishra (7 out of 160 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Transphorm Technology, Inc.. Retrieved from https://idiyas.com/company/transphorm-technology

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

Loading…