For the Inventor, By the Inventor

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Goleta, CA, United States of America

Transphorm Technology, Inc.

USPTO Granted Patents = 15

Forward Citations = 21

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18 inventors (with patents filed for the assignee):

David Michael Rhodes (8 out of 10 patents)

Carl Joseph Neufeld (7 out of 13 patents)

Rakesh K Lal (7 out of 27 patents)

4. Yifeng Wu (7 out of 120 patents)

5. Umesh Kumar Mishra (7 out of 160 patents)

6. Geetak Gupta (6 out of 7 patents)

7. Davide Bisi (4 out of 4 patents)

8. John Kirk Gritters (3 out of 3 patents)

9. Jason Cuadra (3 out of 14 patents)

10. Zhan Wang (3 out of 9 patents)

11. Brian L Swenson (2 out of 7 patents)

12. Sung Hae Yea (2 out of 6 patents)

13. Primit A Parikh (2 out of 72 patents)

14. Mo Wu (1 out of 3 patents)

15. Xiang Liu (1 out of 2 patents)

15 patents: Sort by Forward Citations

1. 12550702 - III-nitride devices with through-via structures (2026-02-10),

2. 12451468 - III-N devices with improved reliability (2025-10-21),

3. 12324180 - Integrated design for III-Nitride devices (2025-06-03),

4. 12266725 - Lateral III-nitride devices including a vertical gate module (2025-04-01),

5. 12074150 - Module configurations for integrated III-nitride devices (2024-08-27),

6. 11973138 - N-polar devices including a depleting layer with improved conductivity (2024-04-30),

7. 11810971 - Integrated design for III-Nitride devices (2023-11-07),

8. 11749656 - Module configurations for integrated III-Nitride devices (2023-09-05),

9. 11322599 - Enhancement mode III-nitride devices having an Al-SiO gate insulator (2022-05-03),

10. 11309884 - Switching circuits having drain connected ferrite beads (2022-04-19),

11. 11121216 - III-nitride devices including a graded depleting layer (2021-09-14),

12. 10897249 - Switching circuits having drain connected ferrite beads (2021-01-19),

13. 10756207 - Lateral III-nitride devices including a vertical gate module (2020-08-25),

14. 10630285 - Switching circuits having drain connected ferrite beads (2020-04-21),

15. 10629681 - III-nitride devices including a graded depleting layer (2020-04-21),

Transphorm Technology, Inc. is a leading innovator in the field of power conversion technology, specializing in the development and manufacturing of high-performance gallium nitride (GaN) solutions. The company focuses on enhancing energy efficiency and reducing the size of power systems across various applications, including consumer electronics, industrial equipment, and electric vehicles. Headquartered in Goleta, California, Transphorm is committed to advancing the capabilities of power electronics through cutting-edge research and development.

Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Oct 6 2026

15 Patents

#31 in Goleta, CA

#5,022 in California

#21,033 in US

#39,880 in the World

Goleta, CA, United States of America

Transphorm Technology, Inc.

Forward Citations = 21

18 inventors:

David Michael Rhodes (8 out of 10 patents)

Carl Joseph Neufeld (7 out of 13 patents)

Rakesh K Lal (7 out of 27 patents)

4. Yifeng Wu (7 out of 120 patents)

5. Umesh Kumar Mishra (7 out of 160 patents)

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