Santa Barbara, CA, United States of America

Brian L Swenson

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 67(Granted Patents)


Location History:

  • Goleta, CA (US) (2015 - 2016)
  • Santa Barbara, CA (US) (2017 - 2020)

Company Filing History:


Years Active: 2015-2025

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7 patents (USPTO):

Title: The Innovative Contributions of Brian L. Swenson in Lateral III-N Devices

Introduction

Brian L. Swenson, based in Santa Barbara, California, is a notable inventor recognized for his significant advancements in the field of lateral III-nitride devices. With an impressive portfolio comprising seven patents, Swenson continues to contribute to the evolution of semiconductor technology.

Latest Patents

Among his latest innovations, Swenson's patent for lateral III-nitride devices featuring a vertical gate module stands out. This invention highlights a lateral III-N device with a vertical gate module composed of III-N material, oriented in either N-polar or group-III polar orientation. The intricacies of this design include a III-N material structure that consists of a III-N buffer layer, a III-N barrier layer, and a III-N channel layer. A vital aspect of this patent is the compositional difference between the barrier and channel layers, which induces a two-dimensional electron gas (2DEG) channel in the III-N channel layer. Furthermore, the design incorporates a p-type III-N body layer positioned over the channel in the source-side access region, with an n-type III-N capping layer above it. Notably, the source electrode is electrically connected to the p-type body while remaining isolated from the 2DEG channel, especially when the gate electrode is biased at a voltage below the threshold.

Career Highlights

Swenson has had a significant impact in the semiconductor industry, particularly through his work with companies like Transphorm, Inc. and Transphorm Technology, Inc. His expertise and innovation have been pivotal in advancing the research and development of high-efficiency power semiconductor devices.

Collaborations

Throughout his career, Brian L. Swenson has collaborated with talented professionals, including Stacia Keller and Nicholas A. Fichtenbaum. These partnerships have enriched his work and contributed to the successful execution of various projects within the industry.

Conclusion

Brian L. Swenson’s contributions to the field of lateral III-nitride devices exemplify his dedication to innovation and technological advancement. With multiple patents to his name and a robust career in leading semiconductor companies, his work continues to influence future developments in the semiconductor sector.

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