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Goleta, CA, United States of America

Transphorm Inc.

Calculating rank

USPTO Granted Patents = 107

% Expired Patents = 0.93

EPO Patents = 6

Trademarks = 2

Forward Citations = 2,829

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34 inventors (with patents filed for the assignee):

Yifeng Wu (51 out of 120 patents)

Umesh Kumar Mishra (48 out of 160 patents)

Srabanti Chowdhury (20 out of 30 patents)

4. Rakesh K Lal (19 out of 27 patents)

5. Primit A Parikh (19 out of 72 patents)

6. James Honea (18 out of 18 patents)

7. Ilan Ben-Yaacov (17 out of 20 patents)

8. Robert Coffie (16 out of 23 patents)

9. Yuvaraj Dora (14 out of 17 patents)

10. Nicholas A Fichtenbaum (14 out of 17 patents)

11. Rongming Chu (12 out of 52 patents)

12. Likun Shen (10 out of 21 patents)

13. Stacia Keller (8 out of 35 patents)

14. Chang Soo Suh (7 out of 25 patents)

15. Zhan Wang (6 out of 9 patents)

Core Competencies:

III-Nitride Transistors

Enhancement Mode Devices

High Voltage Semiconductors

Bridgeless Power Correction

Ferrite Beads

Inductive Load Switching

Carbon Doping

Field Plates

High Efficiency Power Circuits

N-Polar Transistors

Semiconductor Modules

Electronic Components

107 patents: Sort by Forward Citations

1. 10535763 - Enhancement-mode III-nitride devices (2020-01-14),

2. 10319648 - Conditions for burn-in of high power semiconductors (2019-06-11),

3. 10224401 - III-nitride devices including a graded depleting layer (2019-03-05),

4. 10200030 - Paralleling of switching devices for high power circuits (2019-02-05),

5. 10199217 - Methods of forming reverse side engineered III-nitride devices (2019-02-05),

6. 10063138 - Bridgeless power factor correction circuits (2018-08-28),

7. 10043898 - Enhancement-mode III-nitride devices (2018-08-07),

8. 10043896 - III-Nitride transistor including a III-N depleting layer (2018-08-07),

9. 9991884 - Switching circuits having ferrite beads (2018-06-05),

10. 9941399 - Enhancement mode III-N HEMTs (2018-04-10),

11. 9935190 - Forming enhancement mode III-nitride devices (2018-04-03),

12. 9899998 - Bridge circuits and their components (2018-02-20),

13. 9865719 - Carbon doping semiconductor devices (2018-01-09),

14. 9842922 - III-nitride transistor including a p-type depleting layer (2017-12-12),

15. 9831315 - Semiconductor devices with field plates (2017-11-28),

Company Overview

Transphorm Inc., based in Goleta, California, specializes in the development and manufacturing of advanced III-Nitride devices. The company focuses on high-performance semiconductor technologies, particularly enhancement mode transistors and high voltage solutions. Their innovations cater to various applications, including power conversion and energy efficiency, utilizing techniques such as carbon doping and field plates. Transphorm is committed to advancing the capabilities of power electronics through its expertise in high voltage semiconductors and related technologies.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

107 Patents

#6 in Goleta, CA

#810 in California

#3,569 in US

#7,342 in the World

Goleta, CA, United States of America

Transphorm Inc.

Forward Citations = 2,829

34 inventors:

Yifeng Wu (51 out of 120 patents)

Umesh Kumar Mishra (48 out of 160 patents)

Srabanti Chowdhury (20 out of 30 patents)

4. Rakesh K Lal (19 out of 27 patents)

5. Primit A Parikh (19 out of 72 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Transphorm Inc.. Retrieved from https://idiyas.com/company/transphorm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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