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Goleta, CA, United States of America

Transphorm Inc.

USPTO Granted Patents = 107

EPO Patents = 6

Trademarks = 4

Forward Citations = 2,714

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34 inventors (with patents filed for the assignee):

Yifeng Wu (51 out of 120 patents)

Umesh Kumar Mishra (48 out of 158 patents)

Srabanti Chowdhury (20 out of 29 patents)

4. Rakesh K Lal (19 out of 26 patents)

5. Primit A Parikh (19 out of 72 patents)

6. James Honea (18 out of 18 patents)

7. Ilan Ben-Yaacov (17 out of 20 patents)

8. Robert Coffie (16 out of 22 patents)

9. Yuvaraj Dora (14 out of 17 patents)

10. Nicholas A Fichtenbaum (14 out of 17 patents)

11. Rongming Chu (12 out of 52 patents)

12. Likun Shen (10 out of 21 patents)

13. Stacia Keller (8 out of 34 patents)

14. Chang Soo Suh (7 out of 20 patents)

15. Zhan Wang (6 out of 9 patents)

Core Competencies:

III-Nitride Devices

Power Factor Correction Circuits

High Power Semiconductors

Gallium Nitride Power Devices

Transistors with Isolation Regions

Semiconductor Power Modules

Inductive Load Power Switching Circuits

Carbon Doping Semiconductor Devices

Multilevel Inverters

Gate Structures for III-N Devices

High Voltage III-Nitride Devices

Semiconductor Electronic Components

107 patents: Sort by Forward Citations

1. 10535763 - Enhancement-mode III-nitride devices (2020-01-14),

2. 10319648 - Conditions for burn-in of high power semiconductors (2019-06-11),

3. 10224401 - III-nitride devices including a graded depleting layer (2019-03-05),

4. 10200030 - Paralleling of switching devices for high power circuits (2019-02-05),

5. 10199217 - Methods of forming reverse side engineered III-nitride devices (2019-02-05),

6. 10063138 - Bridgeless power factor correction circuits (2018-08-28),

7. 10043898 - Enhancement-mode III-nitride devices (2018-08-07),

8. 10043896 - III-Nitride transistor including a III-N depleting layer (2018-08-07),

9. 9991884 - Switching circuits having ferrite beads (2018-06-05),

10. 9941399 - Enhancement mode III-N HEMTs (2018-04-10),

11. 9935190 - Forming enhancement mode III-nitride devices (2018-04-03),

12. 9899998 - Bridge circuits and their components (2018-02-20),

13. 9865719 - Carbon doping semiconductor devices (2018-01-09),

14. 9842922 - III-nitride transistor including a p-type depleting layer (2017-12-12),

15. 9831315 - Semiconductor devices with field plates (2017-11-28),

Transphorm designs and manufactures the highest-performing, highest-reliability GaN semiconductors for high-voltage power conversion applications. With a vertically-integrated business approach, Transphorm is transforming the power electronics industry by creating devices that reduce energy loss and improve overall system efficiency. The company’s GaN-based power conversion devices enable a new wave of energy-saving and renewable energy applications, such as electric vehicles, data centers, and renewable energy systems.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

107 Patents

#6 in Goleta, CA

#794 in California

#3,432 in US

#7,118 in the World

Goleta, CA, United States of America

Transphorm Inc.

Forward Citations = 2,714

34 inventors:

Yifeng Wu (51 out of 120 patents)

Umesh Kumar Mishra (48 out of 158 patents)

Srabanti Chowdhury (20 out of 29 patents)

4. Rakesh K Lal (19 out of 26 patents)

5. Primit A Parikh (19 out of 72 patents)

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