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For the Inventor, By the Inventor

Goleta, CA, United States of America

Transphorm Inc.


USPTO Granted Patents = 107

% Expired Patents = 0.93


Trademarks = 2

Forward Citations = 2,829

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34 inventors (with patents filed for the assignee):

goldMedal Yifeng Wu (51 out of 120 patents)

silverMedal Umesh Kumar Mishra (48 out of 160 patents)

bronzeMedal Srabanti Chowdhury (20 out of 29 patents)

4.  Rakesh K Lal (19 out of 27 patents)

5.  Primit A Parikh (19 out of 72 patents)

6.  James Honea (18 out of 18 patents)

7.  Ilan Ben-Yaacov (17 out of 20 patents)

8.  Robert Coffie (16 out of 23 patents)

9.  Yuvaraj Dora (14 out of 17 patents)

10.  Nicholas A Fichtenbaum (14 out of 17 patents)

11.  Rongming Chu (12 out of 52 patents)

12.  Likun Shen (10 out of 21 patents)

13.  Stacia Keller (8 out of 35 patents)

14.  Chang Soo Suh (7 out of 25 patents)

15.  Zhan Wang (6 out of 9 patents)


Core Competencies:
III-Nitride Transistors
Enhancement Mode Devices
High Voltage Semiconductors
Bridgeless Power Correction
Ferrite Beads
Inductive Load Switching
Carbon Doping
Field Plates
High Efficiency Power Circuits
N-Polar Transistors
Semiconductor Modules
Electronic Components

107 patents:

1. 10535763 - Enhancement-mode III-nitride devices (2020-01-14),
2. 10319648 - Conditions for burn-in of high power semiconductors (2019-06-11),
3. 10224401 - III-nitride devices including a graded depleting layer (2019-03-05),
4. 10200030 - Paralleling of switching devices for high power circuits (2019-02-05),
5. 10199217 - Methods of forming reverse side engineered III-nitride devices (2019-02-05),
6. 10063138 - Bridgeless power factor correction circuits (2018-08-28),
7. 10043898 - Enhancement-mode III-nitride devices (2018-08-07),
8. 10043896 - III-Nitride transistor including a III-N depleting layer (2018-08-07),
9. 9991884 - Switching circuits having ferrite beads (2018-06-05),
10. 9941399 - Enhancement mode III-N HEMTs (2018-04-10),
11. 9935190 - Forming enhancement mode III-nitride devices (2018-04-03),
12. 9899998 - Bridge circuits and their components (2018-02-20),
13. 9865719 - Carbon doping semiconductor devices (2018-01-09),
14. 9842922 - III-nitride transistor including a p-type depleting layer (2017-12-12),
15. 9831315 - Semiconductor devices with field plates (2017-11-28),
Transphorm designs and manufactures the highest-performing, highest-reliability GaN semiconductors for high-voltage power conversion applications. With a vertically-integrated business approach, Transphorm is transforming the power electronics industry by creating devices that reduce energy loss and improve overall system efficiency. The company’s GaN-based power conversion devices enable a new wave of energy-saving and renewable energy applications, such as electric vehicles, data centers, and renewable energy systems.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Sep 15 2026

Transphorm Inc.
107 Patents

#6 in Goleta, CA

#809 in California

#3,561 in US

#7,324 in the World

Goleta, CA (US)
Goleta, CA, United States of America

Transphorm Inc.

Forward Citations = 2,829

34 inventors:

goldMedal Yifeng Wu (51 out of 120 patents)

silverMedal Umesh Kumar Mishra (48 out of 160 patents)

bronzeMedal Srabanti Chowdhury (20 out of 29 patents)

4.  Rakesh K Lal (19 out of 27 patents)

5.  Primit A Parikh (19 out of 72 patents)

Please report any incorrect information to [email protected]
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