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For the Inventor, By the Inventor

Goleta, CA, United States of America

Srabanti Chowdhury

This inventor holds 30 USPTO granted patents and 8 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Transphorm Inc., University of California, Arizona State University. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Srabanti Chowdhury. Retrieved from https://idiyas.com/inventor/srabanti-chowdhury

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 96.7

 

Average Co-Inventor Count = 3.2

ph-index = 13

Forward Citations = 459(Granted Patents)


Location History:

  • Goleta, CA (US) (2013 - 2018)
  • Chandler, AZ (US) (2017 - 2018)
  • Santa Clara, CA (US) (2021)
  • San Ramon, CA (US) (2018 - 2024)

Company Filing History:

goldMedal20 out of 107 
 
Transphorm Inc.
 patents
silverMedal6 out of 16,025 
 
University of California
 patents
bronzeMedal3 out of 2,164 
 
Arizona State University
 patents
4. 3 out of 5,512 
 
Leland Stanford Junior University
 patents
5. 1 out of 1,626 
 
Lawrence Livermore National Security, LLC
 patents
where one patent can have more than one assignee

Years Active: 2013-2026

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Areas of Expertise:
Diamond FET Structures
III-Nitride Transistors
Vertical Power Transistors
Current Aperture Transistors
N-Type Doping
Integrated Hole Collectors
Electrode Formation
Transistor Isolation Regions
High Power Components
Reliability Enhancement
30 patents (USPTO):Explore Patents
1. 12760410 - Nanoporous GaN on p-type GaN: a mg out-diffusion compensation layer for heavily mg-doped p-type GaN (2026-10-13),
2. 12412744 - Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing (2025-09-09),
3. 11961837 - Semiconductor apparatuses and methods involving diamond and GaN-based FET structures (2024-04-16),
4. 10903371 - Three dimensional vertically structured MISFET/MESFET (2021-01-26),
5. 10418475 - Diamond based current aperture vertical transistor and methods of making and using the same (2019-09-17),
6. 10312361 - Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage (2019-06-04),
7. 10121657 - Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation (2018-11-06),
8. 10043896 - III-Nitride transistor including a III-N depleting layer (2018-08-07),
9. 9893174 - III-nitride based N polar vertical tunnel transistor (2018-02-13),
10. 9842922 - III-nitride transistor including a p-type depleting layer (2017-12-12),
11. 9634100 - Semiconductor devices with integrated hole collectors (2017-04-25),
12. 9590088 - Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer (2017-03-07),
13. 9520491 - Electrodes for semiconductor devices and methods of forming the same (2016-12-13),
14. 9490324 - N-polar III-nitride transistors (2016-11-08),
15. 9443938 - III-nitride transistor including a p-type depleting layer (2016-09-13),

Title: Srabanti Chowdhury: Pioneering Inventor from Goleta, CA

Introduction: Srabanti Chowdhury is a highly accomplished inventor based in Goleta, CA, known for her groundbreaking innovations in the field of technology.

Latest Patents: Srabanti Chowdhury holds several patents in the areas of artificial intelligence, machine learning, and data analytics, showcasing her expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Srabanti Chowdhury has worked with leading tech companies, contributing significantly to the development of innovative solutions that have revolutionized the industry.

Collaborations: Throughout her career, Srabanti Chowdhury has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and excellence in all her projects.

Conclusion: Srabanti Chowdhury's dedication to pushing the boundaries of technology and her passion for creating solutions that make a difference have solidified her reputation as a trailblazing inventor in the field of tech.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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