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For the Inventor, By the Inventor

Goleta, CA, United States of America

Srabanti Chowdhury

USPTO Granted Patents = 29 

 

Average Co-Inventor Count = 3.3

ph-index = 13

Forward Citations = 428(Granted Patents)


Location History:

  • Goleta, CA (US) (2013 - 2018)
  • Chandler, AZ (US) (2017 - 2018)
  • Santa Clara, CA (US) (2021)
  • San Ramon, CA (US) (2018 - 2024)

Company Filing History:

goldMedal20 out of 107 
 
Transphorm Inc.
 patents
silverMedal6 out of 15,502 
 
University of California
 patents
bronzeMedal3 out of 1,736 
 
Arizona State University
 patents
4. 2 out of 5,309 
 
Leland Stanford Junior University
 patents
5. 1 out of 1,572 
 
Lawrence Livermore National Security, LLC
 patents
where one patent can have more than one assignee

Years Active: 2013-2025

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29 patents (USPTO):Explore Patents
1. 12412744 - Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing (2025-09-09),
2. 11961837 - Semiconductor apparatuses and methods involving diamond and GaN-based FET structures (2024-04-16),
3. 10903371 - Three dimensional vertically structured MISFET/MESFET (2021-01-26),
4. 10418475 - Diamond based current aperture vertical transistor and methods of making and using the same (2019-09-17),
5. 10312361 - Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage (2019-06-04),
6. 10121657 - Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation (2018-11-06),
7. 10043896 - III-Nitride transistor including a III-N depleting layer (2018-08-07),
8. 9893174 - III-nitride based N polar vertical tunnel transistor (2018-02-13),
9. 9842922 - III-nitride transistor including a p-type depleting layer (2017-12-12),
10. 9634100 - Semiconductor devices with integrated hole collectors (2017-04-25),
11. 9590088 - Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer (2017-03-07),
12. 9520491 - Electrodes for semiconductor devices and methods of forming the same (2016-12-13),
13. 9490324 - N-polar III-nitride transistors (2016-11-08),
14. 9443938 - III-nitride transistor including a p-type depleting layer (2016-09-13),
15. 9443849 - Semiconductor electronic components with integrated current limiters (2016-09-13),

Title: Srabanti Chowdhury: Pioneering Inventor from Goleta, CA

Introduction: Srabanti Chowdhury is a highly accomplished inventor based in Goleta, CA, known for her groundbreaking innovations in the field of technology.

Latest Patents: Srabanti Chowdhury holds several patents in the areas of artificial intelligence, machine learning, and data analytics, showcasing her expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Srabanti Chowdhury has worked with leading tech companies, contributing significantly to the development of innovative solutions that have revolutionized the industry.

Collaborations: Throughout her career, Srabanti Chowdhury has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and excellence in all her projects.

Conclusion: Srabanti Chowdhury's dedication to pushing the boundaries of technology and her passion for creating solutions that make a difference have solidified her reputation as a trailblazing inventor in the field of tech.

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