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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10121657 B1

PDFFull Text
Date of Patent:
Nov. 06, 2018

Filed:

May. 10, 2016

Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Applicant:

Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);

Inventors:

Franz A. Koeck, Tempe, AZ (US);

Srabanti Chowdhury, Chandler, AZ (US);

Robert J Nemanich, Scottsdale, AZ (US);

Assignee:

ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US);

Attorney:

Withrow & Terranova, P.L.L.C.

Primary Examiner:

Kenneth A Bratland, Jr

Int. Cl.
CPC ...
C30B 25/16 (2006.01); H01L 21/02 (2006.01); C23C 16/46 (2006.01); C23C 16/511 (2006.01); C23C 16/27 (2006.01); C23C 16/52 (2006.01); C23C 16/455 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); C30B 25/10 (2006.01); C30B 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); C23C 16/274 (2013.01); C23C 16/278 (2013.01); C23C 16/45523 (2013.01); C23C 16/463 (2013.01); C23C 16/511 (2013.01); C23C 16/52 (2013.01); C30B 25/105 (2013.01); C30B 25/16 (2013.01); C30B 29/04 (2013.01); H01L 21/0262 (2013.01); H01L 21/02576 (2013.01); H01L 29/1602 (2013.01); H01L 29/167 (2013.01); H01L 29/6603 (2013.01); H01L 29/868 (2013.01);
Abstract

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

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