The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
May. 15, 2020
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
The Regents of the University of California, Oakland, CA (US);
Srabanti Chowdhury, San Ramon, CA (US);
Dong Ji, San Jose, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Abstract
In certain examples, methods and semiconductor structures are directed to use of a doped buried region (e.g., Mg-dopant) including a III-Nitride material and having a diffusion path ('ion diffusion path') that includes hydrogen introduced by using ion implantation via at least one ion species. An ion implantation thermal treatment causes hydrogen to diffuse through the ion implanted path and causes activation of the buried region. In more specific examples in which such semiconductor structures have an ohmic contact region at which a source of a transistor interfaces with the buried region, the ohmic contact region is without etching-based damage due at least in part to the post-ion implantation thermal treatment.