Dong Ji

Title: Innovations of Dong Ji in Semiconductor Technology

Introduction

Dong Ji is an accomplished inventor based in San Jose, CA. He has made significant contributions to the field of semiconductor technology. His work focuses on the activation of buried dopants, which is crucial for enhancing the performance of semiconductor devices.

Latest Patents

Dong Ji holds a patent for "Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing." This patent describes methods and semiconductor structures that utilize a doped buried region, such as a Mg-dopant, within a III-Nitride material. The innovation involves an ion diffusion path that includes hydrogen introduced through ion implantation. The thermal treatment following ion implantation allows hydrogen to diffuse and activate the buried region. Notably, this method ensures that the ohmic contact region, where a transistor's source interfaces with the buried region, remains free from etching-based damage due to the post-ion implantation thermal treatment.

Career Highlights

Dong Ji is affiliated with Leland Stanford Junior University, where he continues to advance research in semiconductor technologies. His expertise in ion implantation and thermal treatments has positioned him as a key figure in the development of innovative semiconductor structures.

Collaborations

Dong Ji collaborates with fellow researcher Srabanti Chowdhury, contributing to the advancement of their shared field of study.

Conclusion

Dong Ji's innovative work in semiconductor technology, particularly in the activation of buried dopants, showcases his significant contributions to the industry. His patent reflects a deep understanding of ion implantation techniques and their applications in enhancing semiconductor performance.