The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Nov. 06, 2015
Applicant:
Transphorm Inc., Goleta, CA (US);
Inventors:
Umesh Mishra, Montecito, CA (US);
Srabanti Chowdhury, Goleta, CA (US);
Ilan Ben-Yaacov, Goleta, CA (US);
Assignee:
Transphorm Inc., Goleta, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/0619 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01); H01L 29/42376 (2013.01);
Abstract
Transistor devices which include semiconductor layers with integrated hole collector regions are described. The hole collector regions are configured to collect holes generated in the transistor device during operation and transport them away from the active regions of the device. The hole collector regions can be electrically connected or coupled to the source, the drain, or a field plate of the device. The hole collector regions can be doped, for example p-type or nominally p-type, and can be capable of conducting holes but not electrons.