The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Nov. 28, 2017
Arizona Board of Regents on Behalfof Arizona State University, Scottsdale, AZ (US);
The Regents of the University of California, Oakland, CA (US);
Srabanti Chowdhury, San Ramon, CA (US);
Maitreya Dutta, Hillsboro, OR (US);
Robert Nemanich, Scottsdale, AZ (US);
Franz Koeck, Tempe, AZ (US);
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.