The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Dec. 10, 2014
The Regents of the University of California, Oakland, CA (US);
Srabanti Chowdhury, Chandler, AZ (US);
Ramya Yeluri, Santa Barbara, CA (US);
Christophe Hurni, Goleta, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Ilan Ben-Yaacov, Goleta, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A current aperture vertical electron transistor (CAVET) with ammonia (NH) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.