The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Jan. 07, 2022
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
The Regents of the University of California, Oakland, CA (US);
Srabanti Chowdhury, San Ramon, CA (US);
Mohamadali Malakoutian, Davis, CA (US);
Matthew A. Laurent, Rancho Palos Verdes, CA (US);
Chenhao Ren, Davis, CA (US);
Siwei Li, Davis, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlGaN (0<x<1; x+y=1) and a dielectric layer, and a diamond layer section which may include polycrystalline diamond. The IC includes: a GaN-based field effect transistor (FET) integrated with a portion of the GaN-based substrate, and a diamond-based FET integrated with a portion of the diamond layer section, the diamond FET being electrically coupled to the GaN-based FET and situated over or against a surface region of the GaN-based substrate.