Siwei Li

Title: Siwei Li: Innovator in Semiconductor Technology

Introduction

Siwei Li is a notable inventor based in Davis, California, recognized for his contributions to semiconductor technology. He holds a patent that showcases his innovative approach to integrating diamond and GaN-based structures in semiconductor devices.

Latest Patents

Li's most recent patent is titled "Semiconductor apparatuses and methods involving diamond and GaN-based FET structures." This patent describes methods and semiconductor structures directed to an integrated circuit (IC) that features a diamond layer section and a GaN-based substrate, which are monolithically integrated or bonded as part of the same IC. The GaN-based substrate includes GaN, AlGaN, and a dielectric layer, while the diamond layer section may consist of polycrystalline diamond. The IC integrates a GaN-based field effect transistor (FET) with a portion of the GaN-based substrate and a diamond-based FET with a portion of the diamond layer section. The diamond FET is electrically coupled to the GaN-based FET and is situated over or against a surface region of the GaN-based substrate. Li holds 1 patent in this field.

Career Highlights

Throughout his career, Siwei Li has worked at prestigious institutions, including Leland Stanford Junior University and the University of California. His work has significantly advanced the understanding and application of semiconductor technologies.

Collaborations

Li has collaborated with notable colleagues, including Srabanti Chowdhury and Mohamadali Malakoutian, contributing to various research projects and innovations in the semiconductor field.

Conclusion

Siwei Li's innovative work in semiconductor technology, particularly his integration of diamond and GaN-based structures, positions him as a key figure in advancing this critical area of research. His contributions continue to influence the development of more efficient and effective semiconductor devices.