The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
May. 21, 2015
Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);
Srabanti Chowdhury, San Ramon, CA (US);
Dong Ji, Tempe, AZ (US);
Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);
Abstract
A semiconductor structure, device, or N-polar III-nitride vertical field effect transistor. The structure, device, or transistor includes a current blocking layer and an aperture region. The current blocking layer and aperture region are comprised of the same material. The current blocking layer and aperture region are formed by polarization engineering and not doping or implantation. A method of making a semiconductor structure, device, or III-nitride vertical transistor. The method includes obtaining, growing, or forming a functional bilayer comprising a barrier layer and a two-dimensional electron gas-containing layer. The functional bilayer is not formed via a regrowth step.