Santa Barbara, CA, United States of America

Stacia Keller

USPTO Granted Patents = 34 (Patent Applications = 8)

CIPO Patents = 1

EPO Patents = 3 (Patent Applications = 1)

Average Co-Inventor Count = 4.0

ph-index = 12

Forward Citations = 643(Granted Patents)

Location History:

Goleta, CA (US) (1998 - 2015)
Santa Barbara, CA (US) (2005 - 2023)

Company Filing History:

25 out of 15,458

University of California

Japan Science and Technology Agency

Agency of Industrial Science and Technology

patents

6. 1 out of 3,370

University of Michigan

patents

where one patent can have more than one assignee

Years Active: 1998-2025

where 'Filed Patents' based on already Granted Patents

34 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12230678 - III-N based material structures, methods, devices and circuit modules based on strain management (2025-02-18),

2. 12211955 - Method to control the relaxation of thick films on lattice-mismatched substrates (2025-01-28),

3. 12159929 - High mobility group-III nitride transistors with strained channels (2024-12-03),

4. 11594625 - III-N transistor structures with stepped cap layers (2023-02-28),

5. 11588096 - Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers (2023-02-21),

6. 11101379 - Structure for increasing mobility in a high electron mobility transistor (2021-08-24),

7. 10312361 - Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage (2019-06-04),

8. 10043896 - III-Nitride transistor including a III-N depleting layer (2018-08-07),

9. 9865719 - Carbon doping semiconductor devices (2018-01-09),

10. 9842922 - III-nitride transistor including a p-type depleting layer (2017-12-12),

11. 9685323 - Buffer layer structures suited for III-nitride devices with foreign substrates (2017-06-20),

12. 9443938 - III-nitride transistor including a p-type depleting layer (2016-09-13),

13. 9281183 - Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge (2016-03-08),

14. 9245993 - Carbon doping semiconductor devices (2016-01-26),

15. 9245992 - Carbon doping semiconductor devices (2016-01-26),

Title: Spotlight on Inventor Stacia Keller: Pioneering Innovations in Santa Barbara

Introduction:

In the realm of tech innovations, one name stands out prominently - Stacia Keller, a brilliant inventor based in Santa Barbara, CA. With an impressive portfolio of 31 patents, Keller's groundbreaking work has significantly impacted the field of III-N transistor structures and epitaxial device configurations.

Latest Patents:

1. III-N transistor structures with stepped cap layers: Keller's revolutionary patent introduces III-N devices featuring a stepped cap layer over the channel, optimizing device performance in an N-polar orientation.

2. Method to achieve active p-type layer/layers in III-nitride epitaxial structures: This patent showcases an innovative device structure with a polar p region, effectively integrating hole supply regions for enhanced functionality.

Career Highlights:

Keller's expertise has been honed through his contributions to esteemed institutions such as the University of California and Transphorm Inc. His tenure at these organizations has been marked by a relentless pursuit of excellence and a commitment to pushing the boundaries of technological possibilities.

Collaborations:

Throughout his career, Keller has collaborated closely with visionaries like Umesh Kumar Mishra and Steven P DenBaars. Together, they have spearheaded research initiatives, fostering a culture of innovation and knowledge exchange in the scientific community.

Conclusion:

Inventor Stacia Keller's remarkable journey encapsulates the essence of ingenuity and perseverance in the realm of technological advancements. His relentless pursuit of excellence and groundbreaking patents serve as a testament to his enduring legacy in the world of inventions.

This text is generated by artificial intelligence and may not be accurate.