The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2024

Filed:

Dec. 07, 2020
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Stacia Keller, Santa Barbara, CA (US);

Umesh K. Mishra, Montecito, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7781 (2013.01); H01L 29/1029 (2013.01); H01L 29/151 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01);
Abstract

An electronic device including a substrate a group III-V layer on or above the substrate, wherein the III-V layer has an in-plane lattice constant that is greater than that of gallium nitride or wherein the III-V layer is at least partially relaxed; and an active region including a coherently strained group III-V channel layer on or above the III-V layer; wherein electron mobility in the channel layer is increased by the strain. Structures with an in-plane lattice constant that is smaller than that of gallium nitride are used for increasing the hole mobility by strain.


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