The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Nov. 07, 2019
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Umesh K. Mishra, Montecito, CA (US);
Stacia Keller, Santa Barbara, CA (US);
Elaheh Ahmadi, Hyattsville, MD (US);
Chirag Gupta, Goleta, CA (US);
Yusuke Tsukada, Ibaraki, JP;
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 27/092 (2006.01); H01L 29/205 (2006.01); H01L 29/737 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 27/0924 (2013.01); H01L 29/205 (2013.01); H01L 29/7378 (2013.01); H01L 29/7786 (2013.01); H01L 29/7848 (2013.01); H01L 33/32 (2013.01);
Abstract
The disclosure describes the use of strain to enhance the properties of p- and n-materials so as to improve the performance of III-N electronic and optoelectronic devices. In one example, transistor devices include a channel aligned along uniaxially strained or relaxed directions of the III-nitride material in the channel. Strain is introduced using buffer layers or source and drain regions of different composition