The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Nov. 16, 2017
The Regents of the University of California, Oakland, CA (US);
Brian Romanczyk, Santa Barbara, CA (US);
Haoran Li, Goleta, CA (US);
Elaheh Ahmadi, Hyattsville, MD (US);
Steven Wienecke, Santa Barabara, CA (US);
Matthew Guidry, Goleta, CA (US);
Xun Zheng, Santa Barbara, CA (US);
Stacia Keller, Santa Barbara, CA (US);
Umesh K. Mishra, Montecito, CA (US);
THEREGENIS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As A novel design for a nitrogen polar high-electron-mobility transistor (HEMT) structure comprising a GaN/InGaN composite channel. As illustrated herein, a thin InGaN layer introduced in the channel increases the carrier density, reduces the electric field in the channel, and increases the carrier mobility. The dependence of p on InGaN thickness (InGaN) and indium composition (In) was investigated for different channel thicknesses. With optimizedInGaN andIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT, the electron mobility increased from 606 to 1141 cm/(V·s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm InGaN composite channel.