The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jan. 14, 2022
The Regents of the University of California, Oakland, CA (US);
Kamruzzaman Khan, Ann Arbor, MI (US);
Elaheh Ahmadi, Ann Arbor, MI (US);
Stacia Keller, Santa Barbara, CA (US);
Christian Wurm, Isla Vista, CA (US);
Umesh K. Mishra, Montecito, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US);
Abstract
A substrate comprising a III-N base layer comprising a first portion and a second portion, the first portion of the III-N base layer having a first natural lattice constant and a first dislocation density; and a first III-N layer having a second natural lattice constant and a second dislocation density on the III-N base layer, the first III-N layer having a thickness greater than 10 nm. An indium fractional composition of the first III-N layer is greater than 0.1; the second natural lattice constant is at least 1% greater than the first natural lattice constant; a strain-induced lattice constant of the first III-N layer is greater than 1.0055 times the first natural lattice constant; and the second dislocation density is less than 1.5 times the first dislocation density.