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Years Active: 2025
Title: Kamruzzaman Khan: Innovator in III-N Technology
Introduction
Kamruzzaman Khan is a notable inventor based in Ann Arbor, MI (US). He has made significant contributions to the field of materials science, particularly in the development of methods to control the relaxation of thick films on lattice-mismatched substrates. His innovative work has implications for various applications in semiconductor technology.
Latest Patents
Kamruzzaman Khan holds a patent titled "Method to control the relaxation of thick films on lattice-mismatched substrates." This patent describes a substrate comprising a III-N base layer with distinct portions, where the first portion has a specific natural lattice constant and dislocation density. The invention includes a first III-N layer with a greater thickness and an indium fractional composition exceeding 0.1. The patent outlines critical parameters, such as the relationship between the natural lattice constants and dislocation densities, which are essential for optimizing the performance of semiconductor devices.
Career Highlights
Throughout his career, Kamruzzaman Khan has worked with prestigious institutions, including the University of California and the University of Michigan. His research has focused on advancing the understanding of lattice-mismatched materials, which is crucial for the development of high-performance electronic and optoelectronic devices.
Collaborations
Kamruzzaman has collaborated with talented individuals in his field, including Elaheh Ahmadi and Stacia Keller. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.
Conclusion
Kamruzzaman Khan's contributions to the field of materials science and his innovative patent demonstrate his commitment to advancing technology. His work continues to influence the development of new semiconductor materials and applications.