The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Feb. 26, 2020
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Matthew Guidry, Goleta, CA (US);
Stacia Keller, Santa Barbara, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Brian Romanczyk, Santa Barbara, CA (US);
Xun Zheng, Santa Barbara, CA (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01);
Abstract
Described herein are III-N (e.g. GaN) devices having a stepped cap layer over the channel of the device, for which the III-N material is orientated in an N-polar orientation.