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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9281183 B1

PDFFull Text
Date of Patent:
Mar. 08, 2016

Filed:

Jan. 15, 2015

Metalorganic chemical vapor deposition of oxide dielectrics on n-polar iii-nitride semiconductors with high interface quality and tunable fixed interface charge

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Xiang Liu, Goleta, CA (US);

Umesh K. Mishra, Montecito, CA (US);

Stacia Keller, Santa Barbara, CA (US);

Jeonghee Kim, Goleta, CA (US);

Matthew Laurent, Santa Barbara, CA (US);

Jing Lu, Goleta, CA (US);

Ramya Yeluri, Santa Barbara, CA (US);

Silvia H. Chan, Santa Barbara, CA (US);

Assignee:

The Regents of the University of California, Oakland, CA (US);

Attorney:

Gates & Cooper LLP

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); C30B 25/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C30B 25/02 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02178 (2013.01); H01L 29/66462 (2013.01); H01L 29/7781 (2013.01); H01L 29/2003 (2013.01);
Abstract

A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Find Patent Forward Citations

Liu, Xiang. (2016). Metalorganic chemical vapor deposition of oxide dielectrics on n-polar iii-nitride semiconductors with high interface quality and tunable fixed interface charge (U.S. Patent No. 9281183). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9281183

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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