Jeonghee Kim

Title: Innovations by Jeonghee Kim

Introduction

Jeonghee Kim is an accomplished inventor based in Mohegan Lake, NY (US). He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to improving device performance.

Latest Patents

His latest patents include "Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage." This invention involves the fabrication of transistors where the modulation of current flow occurs in the lateral channel, while the voltage is predominantly held in the vertical direction when the device is in the off-state. In the on-state, current is channeled through an aperture in a current-blocking region after flowing under a gate region into the drift region. Another notable patent is related to "Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge." This method allows for the growth of III-nitride semiconductors and oxides sequentially, forming a high-quality interface without exposure to air.

Career Highlights

Jeonghee Kim is affiliated with the University of California, where he continues to advance research in semiconductor technologies. His work has been instrumental in developing devices that enhance performance while reducing energy loss.

Collaborations

He has collaborated with notable colleagues, including Stacia Keller and Silvia H Chan, contributing to a dynamic research environment that fosters innovation.

Conclusion

Jeonghee Kim's contributions to semiconductor technology through his patents reflect his commitment to advancing the field. His innovative work continues to influence the development of high-performance electronic devices.