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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9935190 B1

PDFFull Text
Date of Patent:
Apr. 03, 2018

Filed:

Mar. 09, 2016

Forming enhancement mode iii-nitride devices

Applicant:

Transphorm Inc., Goleta, CA (US);

Inventors:

Mo Wu, Goleta, CA (US);

Rakesh K. Lal, Isla Vista, CA (US);

Ilan Ben-Yaacov, Goleta, CA (US);

Umesh Mishra, Montecito, CA (US);

Carl Joseph Neufeld, Goleta, CA (US);

Assignee:

Transphorm Inc., Goleta, CA (US);

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Armando Rodriguez

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 29/205 (2006.01); H01L 29/51 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/28264 (2013.01); H01L 21/3081 (2013.01); H01L 21/30617 (2013.01); H01L 21/30621 (2013.01); H01L 21/31144 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4236 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/7786 (2013.01); H01L 21/02241 (2013.01); H01L 21/02255 (2013.01); H01L 29/1066 (2013.01); H01L 29/4232 (2013.01);
Abstract

A method of fabricating a III-N device includes forming a III-N channel layer on a substrate, a III-N barrier layer on the channel layer, an insulator layer on the barrier layer, and a trench in a first portion of the device. Forming the trench comprises removing the insulator layer and a part of the barrier layer in the first portion of the device, such that a remaining portion of the barrier layer in the first portion of the device has a thickness away from a top surface of the channel layer, the thickness being within a predetermined thickness range, annealing the III-N device in a gas ambient including oxygen at an elevated temperature to oxidize the remaining portion of the barrier layer in the first portion of the device, and removing the oxidized remaining portion of the barrier layer in the first portion of the device.

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