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For the Inventor, By the Inventor

Allen, TX, United States of America

Chang Soo Suh

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This inventor holds 25 USPTO granted patents and 20 published patent applications, primarily in Gallium Nitride Transistors. Top assignees: Texas Instruments Corporation, Transphorm Inc., University of California. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang Soo Suh. Retrieved from https://idiyas.com/inventor/chang-soo-suh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 84.0

Average Co-Inventor Count = 2.9

ph-index = 10

Forward Citations = 673(Granted Patents)


Location History:

  • Santa Barbara, CA (US) (2010)
  • Goleta, CA (US) (2010 - 2014)
  • Allen, TX (US) (2016 - 2024)

Company Filing History:

goldMedal15 out of 29,869 
 
Texas Instruments Corporation
 patents
silverMedal7 out of 107 
 
Transphorm Inc.
 patents
bronzeMedal2 out of 16,008 
 
University of California
 patents
4. 1 out of 1 
 
Tansphorm Inc.
 patent

Years Active: 2010-2026

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Areas of Expertise:
Gallium Nitride
High-Voltage Transistor
Enhancement Mode
HEMT
Field Effect Transistor
Monolithic Integration
Doped High Band-Gap
Current Source
P-GaN
AlGaN
III-Nitride
Screening Back Gating
25 patents (USPTO):Explore Patents
1. 12652843 - High band-gap devices with a doped high band-gap gate electrode extension (2026-06-09),
2. 12635221 - High-voltage depletion-mode current source, transistor, and fabrication methods (2026-05-19),
3. 12615796 - Electronic device with enhancement mode gallium nitride transistor, and method of making same (2026-04-28),
4. 12604509 - High voltage transistor with a field plate (2026-04-14),
5. 12520547 - Monolithic integration of high and low-side GaN FETS with screening back gating effect (2026-01-06),
6. 12046666 - Gallium nitride (GaN) based transistor with multiple p-GaN blocks (2024-07-23),
7. 11978790 - Normally-on gallium nitride based transistor with p-type gate (2024-05-07),
8. 11888027 - Monolithic integration of high and low-side GaN FETs with screening back gating effect (2024-01-30),
9. 11302785 - Method for testing a high voltage transistor with a field plate (2022-04-12),
10. 11177378 - HEMT having conduction barrier between drain fingertip and source (2021-11-16),
11. 11049960 - Gallium nitride (GaN) based transistor with multiple p-GaN blocks (2021-06-29),
12. 10707324 - Group IIIA-N HEMT with a tunnel diode in the gate stack (2020-07-07),
13. 10680093 - HEMT having conduction barrier between drain fingertip and source (2020-06-09),
14. 10381456 - Group IIIA-N HEMT with a tunnel diode in the gate stack (2019-08-13),
15. 9882041 - HEMT having conduction barrier between drain fingertip and source (2018-01-30),

Title: The Innovative Contributions of Chang Soo Suh

Introduction

Chang Soo Suh is a prominent inventor based in Allen, Texas, renowned for his significant contributions in the field of semiconductor technology. With a robust portfolio comprising 20 patents, Suh has made remarkable advancements, particularly in gallium nitride (GaN) technology, which has implications for high-efficiency power devices and energy solutions.

Latest Patents

Among his latest innovations are several cutting-edge patents that focus on GaN-based transistors. One notable patent describes a gallium nitride-based transistor equipped with multiple p-GaN blocks. This innovative design enhances the device's efficiency by integrating a substrate, a GaN layer, and an aluminum nitride layer, which collectively support a two-dimensional electron gas (2DEG) at their interface. Additionally, he developed a normally-on gallium nitride based transistor featuring a low threshold depletion mode. This semiconductor device incorporates a III-N channel layer that supports a 2DEG and includes a p-type gate structure, demonstrating advancements in device miniaturization and performance optimization.

Career Highlights

Chang Soo Suh's career has been marked by his tenure at leading technology companies, including Texas Instruments Corporation and Transphorm Inc. His work in these organizations has allowed him to push the boundaries of semiconductor innovation, facilitating the development of next-generation electronic components.

Collaborations

Suh has collaborated with several esteemed colleagues in the field, most notably Jungwoo Joh and Umesh Kumar Mishra. These partnerships have fostered an environment of innovation, allowing for the exchange of ideas and advancements in technology that benefit the broader industry.

Conclusion

In summary, Chang Soo Suh stands out as a key inventor in the realm of semiconductor technology. His contributions not only enhance the understanding of gallium nitride transistors but also pave the way for future innovations in energy-efficient electronics. With a solid foundation of patents and noteworthy collaborations, Suh continues to influence the technological landscape significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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