The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Dec. 10, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Maik Peter Kaufmann, Freising, DE;

Michael Lueders, Freising, DE;

Chang Soo Suh, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2025.01); H10D 1/47 (2025.01); H10D 1/68 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/62 (2025.01); H10D 84/05 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H10D 84/01 (2025.01); H10D 1/47 (2025.01); H10D 1/68 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 62/8503 (2025.01); H10D 64/62 (2025.01); H10D 84/05 (2025.01); H10D 84/811 (2025.01);
Abstract

A depletion-mode current source having a saturation current of sufficient accuracy for use as a pre-charge circuit in a start-up circuit of an AC-to-DC power converter is fabricated using an enhancement-mode-only process. The depletion-mode current source can be fabricated on the same integrated circuit (IC) as a gallium nitride field-effect transistor (FET) and resistive and capacitive components used in the start-up circuit, without affecting the enhancement-mode-only fabrication process by requiring additional masks or materials, as would be required to fabricate a depletion-mode FET on the same IC as an enhancement-mode FET. The current source includes a resistive patterned two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) channel coupled between two terminals and one or more metal field plates extending from one of the terminals and overlying the patterned area of the channel, the field plates being separated from the channel and from each other by dielectric layers.


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