The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jun. 18, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Ramana Tadepalli, McKinney, TX (US);

Chang Soo Suh, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/26 (2020.01); H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); G01R 31/2601 (2013.01); G01R 31/2621 (2013.01); H01L 21/76838 (2013.01); H01L 22/20 (2013.01); H01L 23/3107 (2013.01); H01L 23/528 (2013.01); H01L 24/05 (2013.01); H01L 24/17 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 29/7787 (2013.01); H01L 29/7833 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/17106 (2013.01); H01L 2224/48132 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/49113 (2013.01);
Abstract

In a described example, an apparatus includes a transistor formed on a semiconductor substrate, the transistor including: a transistor gate and an extended drain between the transistor gate and a transistor drain contact; a transistor source contact coupled to a source contact probe pad; a first dielectric layer covering the semiconductor substrate and the transistor gate; a source field plate on the first dielectric layer and coupled to a source field plate probe pad spaced from and electrically isolated from the source contact probe pad; and the source field plate capacitively coupled through the first dielectric layer to a first portion of the extended drain.


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