The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Aug. 11, 2022
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Dong Seup Lee, McKinney, TX (US);
Chang Soo Suh, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H01L 21/285 (2006.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 64/0124 (2026.01); H10D 64/693 (2025.01);
Abstract
A microelectronic device includes a GaN FET on a substrate such as silicon and a buffer layer of p-type GaN semiconductor material. The GaN FET includes a gate electrode extension of p-type GaN semiconductor material in electrical contact with the gate electrode. The gate electrode extension of p-type GaN semiconductor material in electrical contact with the gate electrode may improve the GaN FET characteristics such as off state leakage, subthreshold voltage and post stress Vt shift.