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Dong Seup Lee

This inventor holds 28 USPTO granted patents and 34 published patent applications, primarily in Gallium Nitride Technology. Top assignee: Texas Instruments Corporation. Active years: 2017-2026.

USPTO Granted Patents = 28 (Patent Applications = 34)

% Patents Active = 96.4

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 11(Granted Patents)

Company Filing History:

28 out of 29,854

Texas Instruments Corporation

patents

Years Active: 2017-2026

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Areas of Expertise:

Gallium Nitride

High Band-Gap Devices

Transistor

Integrated Circuits

Charge Control Layer

Field Plates

Electronic Device

Monolithic Integration

Doped Regions

HEMT

Surface Passivation

Threshold Shift

28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12745407 - Resistor structure including charge control layer (2026-09-22),

2. 12720833 - Field plates for integrated circuits (2026-08-25),

3. 12672342 - Integrated boot diode with high forward bias capability (2026-06-30),

4. 12652843 - High band-gap devices with a doped high band-gap gate electrode extension (2026-06-09),

5. 12635167 - Drain contact extension layout for hard switching robustness (2026-05-19),

6. 12615796 - Electronic device with enhancement mode gallium nitride transistor, and method of making same (2026-04-28),

7. 12532493 - Transistor with buffer structure having carbon doped profile (2026-01-20),

8. 12520547 - Monolithic integration of high and low-side GaN FETS with screening back gating effect (2026-01-06),

9. 12444600 - Gallium nitride device having a combination of surface passivation layers (2025-10-14),

10. 12211835 - Group III-V IC with different sheet resistance 2-DEG resistors (2025-01-28),

11. 12166119 - Gallium nitride transistor with a doped region (2024-12-10),

12. 12142639 - Electronic device with gallium nitride transistors and method of making same (2024-11-12),

13. 11978790 - Normally-on gallium nitride based transistor with p-type gate (2024-05-07),

14. 11888027 - Monolithic integration of high and low-side GaN FETs with screening back gating effect (2024-01-30),

15. 11769824 - Gallium nitride transistor with a doped region (2023-09-26),

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Title: A Spotlight on Inventor Dong Seup Lee from McKinney, TX

Introduction:

Dong Seup Lee, a talented inventor based in McKinney, TX, has made significant contributions in the field of semiconductor devices. With a total of 16 patents to his name, he continues to drive innovation in the industry.

Latest Patents:

1. Normally-on gallium nitride based transistor with p-type gate.

2. Monolithic integration of high and low-side GaN FETs with screening back gating effect.

Career Highlights:

Dong Seup Lee is currently affiliated with Texas Instruments Corporation, a leading technology company known for its groundbreaking innovations. His work at Texas Instruments Corporation has been instrumental in pushing the boundaries of semiconductor technology.

Collaborations:

Throughout his career, Dong Seup Lee has collaborated with esteemed professionals in the field. Some of his coworkers include Sameer P Pendharkar and Jungwoo Joh, who have played a crucial role in bringing his inventions to life.

Conclusion:

Inventor Dong Seup Lee's dedication to advancing semiconductor technology is evident through his impressive patent portfolio and collaborations with industry experts. His contributions continue to have a lasting impact on the field, inspiring innovation and pushing the boundaries of what is possible in the world of technology.

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Profile summary based on public USPTO records.

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