The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Oct. 12, 2021
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Dong Seup Lee, McKinney, TX (US);
Jungwoo Joh, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/85 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/117 (2025.01); H10D 62/124 (2025.01); H10D 62/126 (2025.01); H10D 64/258 (2025.01); H10D 64/517 (2025.01); H10D 64/518 (2025.01); H10D 64/519 (2025.01); H10D 62/8503 (2025.01);
Abstract
A microelectronic device includes a GaN FET on a substrate such as silicon and a buffer layer of III-N semiconductor material. The GaN FET includes both source contacts and drain contacts to a channel layer of III-N semiconductor material. Source contacts to the source region are placed farther from the gate electrode fingertip than drain contacts to the drain region.