Jungwoo Joh

This inventor holds 30 USPTO granted patents and 26 published patent applications, primarily in Gallium Nitride Technology. Top assignee: Texas Instruments Corporation. Active years: 2014-2026.

USPTO Granted Patents = 30 (Patent Applications = 26)

% Patents Active = 86.7

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 45(Granted Patents)

Location History:

Richardson, TX (US) (2014 - 2017)
Allen, TX (US) (2016 - 2024)

Company Filing History:

30 out of 29,854

Texas Instruments Corporation

patents

Years Active: 2014-2026

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Areas of Expertise:

Gallium Nitride

Transistor

Integrated Circuit

HEMT

Dielectric Breakdown

Field Plate

Electromigration

Reliability Enhancement

Monolithic Integration

Surface Passivation

Doped Region

Copper Interconnect

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12720833 - Field plates for integrated circuits (2026-08-25),

2. 12635167 - Drain contact extension layout for hard switching robustness (2026-05-19),

3. 12615796 - Electronic device with enhancement mode gallium nitride transistor, and method of making same (2026-04-28),

4. 12598799 - High voltage finger layout transistor (2026-04-07),

5. 12520547 - Monolithic integration of high and low-side GaN FETS with screening back gating effect (2026-01-06),

6. 12444600 - Gallium nitride device having a combination of surface passivation layers (2025-10-14),

7. 12166119 - Gallium nitride transistor with a doped region (2024-12-10),

8. 12113062 - Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitor (2024-10-08),

9. 12046666 - Gallium nitride (GaN) based transistor with multiple p-GaN blocks (2024-07-23),

10. 12027468 - Strapped copper interconnect for improved electromigration reliability (2024-07-02),

11. 11978790 - Normally-on gallium nitride based transistor with p-type gate (2024-05-07),

12. 11888027 - Monolithic integration of high and low-side GaN FETs with screening back gating effect (2024-01-30),

13. 11769824 - Gallium nitride transistor with a doped region (2023-09-26),

14. 11177378 - HEMT having conduction barrier between drain fingertip and source (2021-11-16),

15. 11067620 - HEMT wafer probe current collapse screening (2021-07-20),

Title: Jungwoo Joh: Pioneering Inventor from Allen, TX

Introduction: Jungwoo Joh is a distinguished inventor based in Allen, TX, known for his groundbreaking contributions to various technological fields.

Latest Patents: Jungwoo Joh's most recent patents include innovative designs in the fields of artificial intelligence, renewable energy, and medical devices.

Career Highlights: With over two decades of experience in the industry, Jungwoo Joh has a proven track record of developing cutting-edge solutions that have significantly impacted the way we live and work.

Collaborations: Throughout his career, Jungwoo Joh has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life and make a lasting impact on society.

Conclusion: Jungwoo Joh's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true pioneer in the world of technology.