The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Feb. 02, 2021
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Dong Seup Lee, McKinney, TX (US);
Jungwoo Joh, Allen, TX (US);
Pinghai Hao, Plano, TX (US);
Sameer Pendharkar, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/2654 (2013.01); H01L 29/0603 (2013.01); H01L 29/0607 (2013.01); H01L 29/0843 (2013.01); H01L 29/2003 (2013.01); H01L 29/41775 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/0891 (2013.01); H01L 29/42316 (2013.01);
Abstract
In some examples, a transistor comprises a gallium nitride (GaN) layer; a GaN-based alloy layer having a top side and disposed on the GaN layer, wherein source, drain, and gate contact structures are supported by the GaN layer; and a first doped region positioned in a drain access region and extending from the top side into the GaN layer.