The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Jul. 05, 2023
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Qhalid R S Fareed, Plano, TX (US);
Dong Seup Lee, Mckinney, TX (US);
Nicholas S. Dellas, Dallas, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/151 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01);
Abstract
Fabrication methods and gallium nitride transistors, in which an electronic device includes a substrate, a buffer structure, a hetero-epitaxy structure over the buffer structure, and a transistor over or in the hetero-epitaxy structure. In one example, the buffer structure has an extrinsically carbon doped gallium nitride layer over a dual superlattice stack or over a multilayer composition graded aluminum gallium nitride stack, and a silicon nitride cap layer over the hetero-epitaxy structure.