Qhalid R S Fareed

Title: Innovations of Qhalid R S Fareed

Introduction

Qhalid R S Fareed is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of electronic devices, particularly through his work with gallium nitride transistors. With a total of two patents to his name, Fareed continues to push the boundaries of technology.

Latest Patents

Fareed's latest patents focus on the fabrication methods and applications of electronic devices utilizing gallium nitride transistors. One of his patents describes an electronic device that includes a substrate, a buffer structure, a hetero-epitaxy structure over the buffer structure, and a transistor integrated within the hetero-epitaxy structure. In this innovation, the buffer structure features an extrinsically carbon-doped gallium nitride layer positioned over a dual superlattice stack or a multilayer composition graded aluminum gallium nitride stack. Additionally, a silicon nitride cap layer is placed over the hetero-epitaxy structure, enhancing the device's performance.

Career Highlights

Qhalid R S Fareed is currently employed at Texas Instruments Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of electronic devices, particularly in the realm of high-efficiency transistors.

Collaborations

Fareed has collaborated with notable colleagues, including Dong Seup Lee and Nicholas Stephen Dellas. These partnerships have fostered innovation and contributed to the development of cutting-edge technologies in the field.

Conclusion

Qhalid R S Fareed's contributions to the field of electronic devices, particularly through his patents on gallium nitride transistors, highlight his role as a significant inventor. His work at Texas Instruments Corporation and collaborations with esteemed colleagues further underscore his impact on technology.