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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10319648 B1

PDFFull Text
Date of Patent:
Jun. 11, 2019

Filed:

Apr. 17, 2018

Conditions for burn-in of high power semiconductors

Applicant:

Transphorm Inc., Goleta, CA (US);

Inventors:

Kurt Vernon Smith, Santa Barbara, CA (US);

Likun Shen, Goleta, CA (US);

David Michael Rhodes, Santa Barbara, CA (US);

Ronald Avrom Barr, Santa Barbara, CA (US);

James Leroy McKay, Santa Barbara, CA (US);

Assignee:

Transphorm Inc., Goleta, CA (US);

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Richard A Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 21/48 (2006.01); H01L 21/78 (2006.01); G01R 31/26 (2014.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01R 31/2642 (2013.01); H01L 21/4853 (2013.01); H01L 21/67271 (2013.01); H01L 21/78 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01);
Abstract

Techniques for improving reliability of III-N devices include holding the III-N devices at a first temperature less than or equal to 30° for a first period of time while applying a first gate-source voltage lower than a threshold voltage of the III-N devices and a first drain-source voltage greater than 0.2 times a break down voltage of the III-N devices; and holding the III-N devices at a second temperature greater than the first temperature for a second period of time while applying a second gate-source voltage lower than a threshold voltage of the III-N devices and a second drain-source voltage greater than 0.2 times a breakdown voltage of the III-N devices. After holding the III-N devices at the first and second temperatures, screening the III-N devices based on electrical performance of one or more parameters of the III-N devices.

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